Abstract:
In this study, we simulate three amorphous silicon photovoltaic cells, the first is in
hydrogenated amorphous silicon a-Si:H, the second is in hydrogenated amorphous silicon
germanium a-SiGe:H and the third is a tandem cell in a-Si:H and a-SiGe: H. This simulation
was carried out using the program AFORS-Het (Automated FOR Simulation of
heterojunction). In this study, we focused on the effect of the thickness and doping
concentration of each layer on the characteristics of photovoltaic cells (open circuit voltage,
short circuit current, form factor and efficiency)
