Étude de l'effet du dopage sur les performances des cellules solaires à base de CIGS

Abstract

The purpose of this memory is to improve the electrical parameters of the CIGS cell, in particular to increase efficiency. For this, a simulation and design study of a thin-film CIGS solar cell by “Copper Indium Gallium Selenide” (CuIn (1-x) GaxSe2) by varying the concentration of thin and heterojunction layers based on ZnO / CdS (n) / CIGS (p) / Mo for (x = 0.31). The modeling and simulation tool is Tcad Silvaco 2D software suitable for studying the performance of this CIGS-based solar cell.