Abstract:
The purpose of this memory is to improve the electrical parameters of the CIGS cell, in
particular to increase efficiency. For this, a simulation and design study of a thin-film CIGS
solar cell by “Copper Indium Gallium Selenide” (CuIn (1-x) GaxSe2) by varying the
concentration of thin and heterojunction layers based on ZnO / CdS (n) / CIGS (p) / Mo for (x
= 0.31). The modeling and simulation tool is Tcad Silvaco 2D software suitable for studying
the performance of this CIGS-based solar cell.