Please use this identifier to cite or link to this item: https://dspace.univ-ghardaia.edu.dz/xmlui/handle/123456789/8928
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dc.contributor.authorGHOUL, Fatma Zohra-
dc.date.accessioned2024-12-09T09:27:03Z-
dc.date.available2024-12-09T09:27:03Z-
dc.date.issued2024-
dc.identifier.urihttps://dspace.univ-ghardaia.edu.dz/xmlui/handle/123456789/8928-
dc.description.abstractIn this study, we simulate three amorphous silicon photovoltaic cells, the first is in hydrogenated amorphous silicon a-Si:H, the second is in hydrogenated amorphous silicon germanium a-SiGe:H and the third is a tandem cell in a-Si:H and a-SiGe: H. This simulation was carried out using the program AFORS-Het (Automated FOR Simulation of heterojunction). In this study, we focused on the effect of the thickness and doping concentration of each layer on the characteristics of photovoltaic cells (open circuit voltage, short circuit current, form factor and efficiency)EN_en
dc.language.isoenEN_en
dc.publisheruniversité GhardaiaEN_en
dc.subjectHydrogenated amorphous silicon ,Tandem cell, simulation ,AFORS -HETEN_en
dc.subjectSilicium amorphe hydrogéné ,Cellule tandem ,simulation, AFORS-HETEN_en
dc.titleStudy and simulation of a tandem cell based on hydrogenated amorphous silicon and its alloysEN_en
dc.typeThesisEN_en
Appears in Collections:Mémoires de Master

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